Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C2H4

Surface Science

Volumn 347, Issue 1-2, 1996, Pages 105-110

  Takaoka, T ^a   Takagaki, T ^a,b   Igari, Y ^a   Kusunoki, I ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Alkenes; Auger electron spectroscopy; Compound formation; Low energy electron diffraction (LEED); Silicon; Silicon carbide; Surface chemical reaction

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; CRYSTAL ORIENTATION; LOW ENERGY ELECTRON DIFFRACTION; OLEFINS; SILICON; SILICON CARBIDE;

COMPOUND FORMATION; SURFACE CHEMICAL REACTION;

SURFACE PHENOMENA;

EID: 0030083016     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00957-4     Document Type: Article

References (32)

1. R.B. Campbell and H.-C. Chang, in: Semiconductors and Semimetals, Vol. 7, part B, Eds. R.K. Willardson and A.C. Beer (Academic Press, New York, 1971) p. 625.
2. W.C. Nieberding and J.A. Powell, IEEE Trans. Ind. Electron. IE-29, 103 (1982) (Special Issue on High Temperature Electrons).
3. Novel Refractory Semiconductors, Eds. D. Emin, T.L. Aselage and C. Wood, Mater. Res. Symp. Proc. 97 (1987) pp. 159-300.
4. Silicon Carbide and Related Materials, Eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman (Institute of Physics, Bristol and Philadelphia, 1994).
5. J.C. Angus and C.C. Hayman, Science 241 (1988) 913.
6. T. Takagaki, Y. Igari, T. Takaoka and I. Kusunoki, Appl. Surf. Sci., in press.
7. F. Bozso, J.T. Yates, Jr., W.J. Choyke and L. Muehlhoff, J. Appl. Phys. 57 (1985) 2771.
8. P.A. Taylor, M. Bozack, W.J. Choyke and J.T. Yates, Jr., J. Appl. Phys. 65 (1989) 1099.
9. S. Nishino, J.A. Powell and H.A. Will, Appl. Phys. Lett. 42 (1983) 460.
10. A. Suzuki, K. Furukawa, Y. Higashigaki, S. Harada, S. Nakajima and T. Inoguchi, J. Cryst. Growth 70 (1984) 287.
11. B.V. Spitsyn, L.L. Bouilov and B.V. Derjaguin, J. Cryst. Growth 52 (1981) 219.
12. S. Matsumoto, Y. Sato, M. Kamo and N. Setaka, J. Appl. Phys. 21 (1982) L183.
13. L.H. Chua, R.B. Jackman and J.S. Foord, Surf. Sci. 315 (1994) 69.
14. V.G. Lifshits, A.A. Saranin and A.V. Zotov, in: Surface Phase on Silicon (Wiley, New York, 1994).
15. R.N. Thomal and M.H. Francombe, Appl. Phys. Lett. 11 (1967) 108.
16. T. Sakamoto, T. Takahashi, E. Suzuki, A. Shoji, H. Kawanani, Y. Komiya and Y. Tarui, Surf. Sci. 86 (1979) 102.
17. W.K. Liu, S.M. Mokler, N. Ohtani, C. Robert and B.A. Joyce, Surf. Sci. 264 (1992) 301.
18. H. Wang, R. Lin and X. Wang, Phys. Rev. B 36 (1987) 7712.
19. K. Kato, T. Ide, T. Nishimori and T. Ichinokawa, Surf. Sci. 207 (1988) 177.
20. R.I.G. Uhrberg, I.E. Northrup, D.K. Biegelsen, R.D. Bringans and L.-E. Swartz, Phys. Rev. B 46 (1992) 10251.
21. T. Ide and T. Mizutani, Phys. Rev. B 45 (1992) 1447.
22. D. Chen, M.J. Gallagher and D. Sarid, J. Vac. Sci. Technol. B 12 (1994) 1947.
23. P. Gupta, V.L. Colvin and S.M. George, Phys. Rev. B 37 (1988) 8234.
24. K. Sinniah, M.G. Sherman, L.B. Lewis, W.H. Weinberg, J.T. Yates, Jr. and K.C. Janda, Phys. Rev. Lett. 62 (1989) 567.
25. K. Sinniah, M.G. Sherman, L.B. Lewis, W.H. Weinberg, J.T. Yates, Jr. and K.C. Janda, J. Chem. Phys. 92 (1990) 5700.
26. L. Clemen, R.M. Wallace, P.A. Taylor, M.J. Dresser, W.J. Choyke, W.H. Weinberg and J.T. Yates, Jr., Surf. Sci. 268 (1992) 205.
27. K.C. Pandy, Proc. Seventh Int. Conf. on the Physics of Semiconductors, Eds. J.D. Chadi and W.A. Harrison (Springer, New York, 1985) p. 55.
28. Y.J. Chabal and K. Raghavachari, Phys. Rev. Lett. 54 (1985) 1055.
29. J.J. Boland, Surf. Sci. 261 (1992) 17.
30. J. Yoshinobu, H. Tsuda, M. Onchi and M. Nishijima, J. Chem. Phys. 87 (1987) 7332.
31. J. Wintterlin and Ph. Avouris, Surf. Sci. 286 (1993) 529.
32. J. Yamauchi, K. Kobayashi and M. Tsukada, Surf. Sci. 306 (1994) 42.