Advanced 2.5 nm oxidized nitride gate dielectric for highly reliable 0.25 μm MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 45-46

  Yamamoto, Toyoji ^a   Ogura, Takashi ^a   Saito, Yukishige ^a   Uwasawa, Ken'ichi ^a   Tatsumi, Toru ^a   Mogami, Tohru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; NITRIDING; OXIDATION; ULTRATHIN FILMS;

OXIDIZED NITRIDE GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0030646922     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)