TEOS-based PECVD of silicon dioxide for VLSI applications

Advanced Materials for Optics and Electronics

Volumn 6, Issue 2, 1996, Pages 73-82

  Ray, Samit K ^a   Maiti, Chinmay K ^a   Lahiri, Samir K ^a   Chakrabarti, Nirmal B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Microwave plasma; PECVD; Silicon dioxide; TEOS; Thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; INFRARED SPECTROSCOPY; MOS DEVICES; OXIDATION; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; VLSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY;

IN SITU PLASMA OXIDATION; INFRARED TRANSMISSION SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE THERMAL OXIDATION; MICROWAVE PLASMA ENHANCED DECOMPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROSCOPY; TETRAETHYLORTHOSILICATE;

THIN FILMS;

EID: 0030110688     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-0712(199603)6:2<73::AID-AMO215>3.0.CO;2-R     Document Type: Review

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