Growth, trapping and abatement of dielectric particles in PECVD systems

Plasma Sources Science and Technology

Volumn 6, Issue 3, 1997, Pages 405-414

  Raoux, S ^a   Cheung, D ^a   Fodor, M ^a   Taylor, W N ^a   Fairbairn, K ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; DIELECTRIC MATERIALS; ELECTROSTATIC SEPARATORS; GRAVITATIONAL EFFECTS; MORPHOLOGY; PARTICLES (PARTICULATE MATTER); PLASMA APPLICATIONS; PLASMA DEVICES; PRECIPITATION (CHEMICAL); SILICON NITRIDE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) SYSTEMS;

PLASMA SOURCES;

EID: 0031209559     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/6/3/018     Document Type: Article

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