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Journal of Physics Condensed Matter

Volumn 14, Issue 23, 2002, Pages 5813-5827

Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures

(4) Rodrigues, S C P a Sipahi, G M a Scolfaro, L M R a Leite, J R a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HAMILTONIANS; POISSON EQUATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

HOLE CHARGE LOCALIZATIONS;

HETEROJUNCTIONS;

EID: 0037124615 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/23/312 Document Type: Article

Times cited : (14)

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