Electronic properties and strain effects in zinc blende GaN and InN

Journal of Physics and Chemistry of Solids

Volumn 60, Issue 3, 1999, Pages 419-424

  Tadjer, A ^a   Abbar, B ^a   Rezki, M ^a   Aourag, H ^a   Certier, M ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SHEAR DEFORMATION; STRAIN; ZINC;

EMPIRICAL PSEUDOPOTENTIAL METHOD; GALLIUM NITRIDE; INDIUM NITRIDE;

NITRIDES;

EID: 0032627745     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(98)00005-5     Document Type: Article

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