Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 769-771

  Tabata, A ^a   Teles, L K ^a   Scolfaro, L M R ^a   Leite, J R ^a   Kharchenko, A ^b   Frey, T ^b   As, D J ^b   Schikora, D ^b   Lischka, K ^b   Furthmuller J ^c   Bechstedt, F ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF PADERBORN   (Germany)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ALLOY LAYERS; BIAXIAL STRAINS; GROUP III NITRIDES; PSEUDO-BINARIES; RADIATIVE RECOMBINATION; RAMAN MEASUREMENTS; RAMAN SCATTERING SPECTROSCOPY; THIN EPITAXIAL LAYER;

CALCULATIONS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM DOTS;

PHASE SEPARATION;

EID: 79956009627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436270     Document Type: Article

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