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Journal of Applied Physics

Volumn 80, Issue 6, 1996, Pages 3471-3478

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

(4) Fan, W J a Li, M F a Chong, T C a Xia, J B b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000528331 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.363217 Document Type: Article

Times cited : (72)

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