SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 14, 2001, Pages 3381-3387

Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende AlxGa1-xN/GaN superlattices

(4) Rodrigues, S C P a Sipahi, G M a Scolfaro, L M R a Leite, J R a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CRYSTAL LATTICES; ELECTRONIC DENSITY OF STATES; GALLIUM NITRIDE; HAMILTONIANS; HOLE TRAPS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN; ZINC;

ALUMINUM GALLIUM NITRIDE; CONFINEMENT POTENTIAL; EXCHANGE-CORRELATION EFFECTS; HEAVY-HOLE; HOLE MINIBAND STRUCTURE; LUTTINGER-KOHN HAMILTONIAN; STRAIN EFFECTS; VALENCE BAND-STRUCTURE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035831786 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/14/311 Document Type: Article

Times cited : (14)

References (24)

1
- 0002864028
- (1998) Rep. Prog. Phys. , vol.61 , pp. 1
- Orton, J.W.¹ Foxon, C.T.²

2
- 0003685207
- Edgar J H (ed); (London: INSPEC)
- (1994) Properties of Group-III Nitrides

3
- 0001775284
- (2000) Appl. Phys. Lett. , vol.76 , pp. 13
- As, D.J.¹ Richter, A.² Busch, J.³ Lübbers, M.⁴ Mimkes, J.⁵ Lischka, K.⁶

4
- 0033079425
- (1999) J. Cryst. Growth , vol.197 , pp. 73
- Wu, J.¹ Yaguchi, H.² Onabe, K.³ Shiraki, Y.⁴

5
- 0003809785
- Pankove J I and Moustakas T D (ed); (San Diego, CA: Academic)
- (1998) Gallium Nitride (GaN): I (Semiconductors and Semimetals Vol 50)

6
- 0005046994
- at press
- (2001) Proc. 25th Int. Conf. on Physics of Semiconductors (Osaka, Japan)
- Marques, M.¹ Ramos, L.E.² Scolfaro, L.M.R.³ Teles, L.K.⁴ Leite, J.R.⁵

7
- 0032613581
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3681
- Kozodoy, P.¹ Hansen, M.² DenBaars, S.P.³ Mishra, U.K.⁴

8
- 0032607053
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2023
- Saxler, A.¹ Mitchel, W.C.² Kung, P.³ Razeghi, M.⁴

9
- 0032620530
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2405
- Hsu, L.¹ Walukiewicz, W.²

10
- 0000927895
- (2000) J. Appl. Phys. , vol.88 , pp. 2030
- Goepfert, I.D.¹ Schubert, E.F.² Osinsky, A.³ Norris, P.E.⁴ Faleev, N.N.⁵

11
- 0033690224
- (2000) Japan. J. Appl. Phys. , vol.39 , pp. 2428
- Kumakura, K.¹ Makimoto, T.² Kobayashi, N.³

12
- 0033321785
- (1999) Japan. J. Appl. Phys. , vol.38
- Kumakura, K.¹ Kobayashi, N.²

13
- 0002786805
- (2000) Proc. Int. Workshop on Nitride Semiconductors (IPAP Conf. Ser. Vol 1) , pp. 74
- Rodrigues, S.C.P.¹ Scolfaro, L.M.R.² Leite, J.R.³ Sipahi, G.M.⁴

14
- 0001518633
- (1996) Phys. Rev. B , vol.53 , pp. 9930
- Sipahi, G.M.¹ Enderlein, R.² Scolfaro, L.M.R.³ Leite, J.R.⁴

15
- 0000360074
- (1998) Phys. Rev. B , vol.58 , pp. 15675
- Rosa, A.L.¹ Scolfaro, L.M.R.² Enderlein, R.³ Sipahi, G.M.⁴ Leite, J.R.⁵

16
- 0031275623
- (1997) Phys. Rev. Lett. , vol.79 , pp. 3712
- Enderlein, R.¹ Sipahi, G.M.² Scolfaro, L.M.R.³ Leite, J.R.⁴

17
- 55449097052
- (1998) Phys. Rev. Lett. , vol.80 , pp. 3160
- Enderlein, R.¹ Sipahi, G.M.² Scolfaro, L.M.R.³ Leite, J.R.⁴

18
- 0000980421
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1015
- Rodrigues, S.C.P.¹ Scolfaro, L.M.R.² Leite, J.R.³ Sipahi, G.M.⁴

19
- 4243257871
- at press
- (2001) Phys. Rev. B , vol.63
- Ramos, L.E.¹ Teles, L.K.² Scolfaro, L.M.R.³ Castineira, J.L.P.⁴ Rosa, A.L.⁵ Leite, J.R.⁶

20
- 0000237514
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2577
- Van De Walle, C.G.¹ Neugebauer, J.²

21
- 0000528331
- (1996) J. Appl. Phys. , vol.80 , pp. 3471
- Fan, W.J.¹ Li, M.F.² Chong, T.C.³ Xia, J.B.⁴

22
- 0001495657
- (1997) J. Appl. Phys. , vol.82 , pp. 2833
- Wright, A.F.¹

23
- 0005025213
- at press
- (2001) J. Appl. Phys.
- Frey, T.¹ As, D.J.² Bartels, M.³ Pawlis, A.⁴ Lischka, K.⁵ Tabata, A.⁶ Fernandez, J.R.L.⁷ Silva, M.T.O.⁸ Leite, J.R.⁹ Haug, C.¹⁰ Brenn, R.¹¹

24
- 0000799441
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2776
- Parker, C.A.¹ Roberts, J.C.² Bedair, S.M.³ Reed, M.J.⁴ Liu, S.X.⁵ El-Masry, N.A.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.