Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 106-113

  Rodrigues, S C P ^a   Sipahi, G M ^a   Scolfaro, L M R ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

GaN InGaN quantum wells; p doping; Self consistent k p theory; Superlattices

Indexed keywords

BAND STRUCTURE; GALLIUM NITRIDE; HAMILTONIANS; HETEROJUNCTIONS; MATRIX ALGEBRA; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; STRAIN;

LUTTINGER-KOHN (LK) HAMILTONIAN; VALENCE BAND STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034966711     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00413-6     Document Type: Conference Paper

References (16)