Critical layer thickness of InGaAs on GaAs examined by photoreflectance spectroscopy

Vacuum

Volumn 50, Issue 1-2, 1998, Pages 219-221

  Sek G ^a   Misiewicz, J ^a   Radziewicz, D ^a   Tlaczala M ^a   Panek, M ^a   Korbutowicz, R ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON TRANSITIONS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTRON SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

INTERBAND TRANSITION ENERGY; PHOTOREFLECTANCE SPECTROSCOPY; PLASTIC RELAXATION EFFECTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032058451     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00046-3     Document Type: Article

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