Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 16, 2001, Pages

  Ramos, L E ^a   Teles, L K ^a   Scolfaro, L M R ^a   Castineira, J L P ^b   Rosa, A L ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN DERIVATIVE; SILICON; ZINC SULFIDE;

ARTICLE; CALCULATION; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; ELECTRONICS; ENERGY; MATERIALS; MATERIALS TESTING; PHYSICS; SEMICONDUCTOR; STRUCTURE ANALYSIS; THEORY;

EID: 0034890771     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.165210     Document Type: Article

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