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Volumn 84, Issue 1, 2000, Pages 116-125

Silicon anisotropic etching in alkaline solutions III: on the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH + IPA solutions

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; MASKS; SILICON WAFERS; THREE DIMENSIONAL;

EID: 0034247280     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00347-7     Document Type: Article
Times cited : (102)

References (13)
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    • Hesketh, P.J.1    Ju, Ch.2    Gowda, S.3
  • 7
    • 0031700033 scopus 로고    scopus 로고
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    • Sato K., Shikida M., Matsushima Y., Yamashiro T., Asaumi K., Iriye Y., Yamamoto M. Characterization of orientation-dependent etching properties of single-crystal silicon: effect of KOH concentration. Sens. Actuators, A. 64:1998;87-93.
    • (1998) Sens. Actuators, a , vol.64 , pp. 87-93
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.