100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

Applied Physics Letters

Volumn 78, Issue 2, 2001, Pages 142-143

  Kanamori, Y ^a   Hane, K ^a   Sai, H ^a   Yugami, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000370938     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1339845     Document Type: Article

References (10)

1. Y. Kanamori, M. Sasaki, and K. Hane, Opt. Lett. 24, 1422 (1999).
2. P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997).
3. M. E. Motamedi, W. H. Southwell, and W. J. Gunning, Appl. Opt. 31, 4371 (1992).
4. S. J. Wilson and M. C. Hutley, Opt. Acta 29, 993 (1982).
5. D. Crouse, Y.-H. Lo, A. E. Miller, and M. Crouse, Appl. Phys. Lett. 76, 49 (2000).
6. H. Masuda and M. Satoh, Jpn. J. Appl. Phys., Part 2 35, L126 (1996).
7. Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys., Part I 36, 7655 (1997).
8. M. G. Moharani, Proc. SPIE 883, 8 (1988).
9. M. G. Moharam and T. K. Gaylord, J. Opt. Soc. Am. 71, 811 (1981).
10. Y. Kanamori, H. Kikuta, and K. Hane, Jpn. J. Appl. Phys., Part 2 39, L735 (2000).