Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 120-124

  Thompson, P E ^a   Silvestre, C ^a   Twigg, M ^a   Jernigan, G ^a   Simons, D S ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Antimony; Atomic hydrogen; Molecular beam epitaxy; Secondary ion mass spectrometry; Silicon; Surfactant assisted growth

Indexed keywords

MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ACTIVE AGENTS;

SOLID SOURCE MOLECULAR BEAM EPITAXY GROWTH;

SEMICONDUCTING SILICON;

EID: 0032066863     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00459-3     Document Type: Article

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