B/Si(100) surface: Atomic structure and epitaxial Si overgrowth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2684-2689

  Zhang, Z ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001638244     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589004     Document Type: Article

References (21)

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21. The number density of features grows with annealing following the boron surface concentration monitored by AES. These features have been repro-ducibly observed for all Si(100):B samples tested but never after the same heat treatment of Si(100) samples doped with other impurities (e.g., P and As).