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Surface Science

Volumn 380, Issue 2-3, 1997, Pages 417-426

Quantitative measurements of Ge surface segregation during SiGe alloy growth

(3) Jernigan, Glenn G a Thompson, Phillip E a Silvestre, Conrad L a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

Molecular beam epitaxy; Silicon germanium; Surface segregation; X ray photoelectron spectroscopy

Indexed keywords

COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEGREGATION (METALLOGRAPHY); SILICON ALLOYS; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM STRESS;

GERMANIUM;

EID: 0031143015 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00036-8 Document Type: Article

Times cited : (38)

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