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Journal of Crystal Growth

Volumn 213, Issue 3-4, 2000, Pages 299-307

Composition and morphology of SiGe alloys grown on Si(100) using an Sb surfactant

(5) Jernigan, G G a Silvestre, C L a Fatemi, M a Twigg, M E a Thompson, P E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

Si molecular beam epitaxy; SiGe; Surfactant assisted growth; TEM; XPS; XRD

Indexed keywords

EID: 0000063423 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00369-9 Document Type: Article

Times cited : (12)

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