In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 40-46

  Zhang, J ^a   Lees, A K ^a   Taylor, A G ^a   Raisbeck, D ^b   Shukla, N ^b   Fernandez J M ^a   Joyce, B A ^a   Pemble, M E ^b,c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; MONITORING; MONTE CARLO METHODS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SURFACES; THERMAL EFFECTS;

ADATOMS; DIMERS; ELECTRONIC CONFIGURATION; GAS SOURCE MOLECULAR BEAM EPITAXY; ISLANDS; REFLECTANCE ANISOTROPY;

SEMICONDUCTING SILICON;

EID: 0030189472     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00010-3     Document Type: Article

References (29)

1. A.Y. Cho, J. Crystal Growth 150 (1995) 1.
2. J.H. Neave, B.A. Joyce, P.J. Dobson and N. Norton, Appl. Phys. A 31 (1983) 1.
3. D.E. Aspnes, Surf. Sci. 307 (1994) 1017.
4. M.E. Pemble et al., Farady Disc. 95 (1993) 199.
5. J.P. Harbison et al., Appl. Phys. Lett. 52 (1988) 2046.
6. K. Deppert, J. Jönsson and L. Samuelson, Appl. Phys. Lett. 61 (1992) 1558.
7. F. Reinhardt et al., J. Vac. Sci. Technol. B 11 (1993) 1427.
8. S.R. Armstrong et al., Surf. Sci. 274 (1992) 263.
9. J. Rumberg et al., J. Vac. Sci. Technol. B 13 (1995) 88.
10. A.R. Turner et al., Phys. Rev. Lett. 74 (1995) 3213.
11. J. Zhang et al., J. Vac. Sci. Technol. A 12 (1994) 1139.
12. L.D. Landau and E.M. Lifshitz, Electrodynamics of Continuous Media (Pergamon, Oxford, 1960) p. 278.
13. J.D.E. McIntyre and D.E. Aspnes, Surf. Sci. 24 (1971) 417.
14. D.E. Aspnes, J. Vac. Sci. Technol. B 3 (1985) 1498.
15. D.E. Aspnes and A.A. Studna, Phys. Rev. B 27 (1983) 985.
16. R.J. Hamers, R.M. Tromp and J.E. Demuh, Phys. Rev, B 34 (1986) 5343.
17. P. Krüger and J. Pollmann, Phys. Rev. Lett, 74 (1995) 1155.
18. C.M.J. Wijers et al., Thin Solid Films 233 (1993) 28.
19. T. Sakamoto, T. Kawamura and G. Hashiguchi, Appl. Phys. Lett. 48 (1986) 1612.
20. J. Zhang et al., Surf. Sci. 231 (1990) 379.
21. S. Clarke, M.R. Wilby, D.D. Vvedensky and T. Kawamura, Phys. Rev. B 40 (1989) 1369.
22. J.H. Neave, P.J. Dobson, B.A. Joyce and J. Zhang, Appl. Phys. Lett. 47 (1985) 100.
23. Y.W. Mo, J. Kleiner, M.B. Webb and M.G. Lagally, Surf. Sci. 268 (1992) 275.
24. Y.W. Mo et al., Phys. Rev. Lett. 63 (1989) 2393.
25. S.M. Gates, C.M. Greenlief, S.K. Kulkarni and H.H. Sawin, J. Vac. Sci. Technol. A 8 (1990) 2965.
26. N. Ohtani et al., Jpn. J. Appl. Phys 33 (1994) 2311.
27. T. Yasuda, L. Mantese, U. Rossow and D.E. Aspnes. Phys. Rev. Lett. 74 (1995) 3431.
28. K. Müller, H.U. Niessen, M. Ospelt and H. von Känel, Phys. Rev. Lett. 63 (1989) 1819.
29. N. Ohtani et al., Surf. Sci. 284 (1993) 305.