Effect of metal-oxide-semiconductor processing on the surface roughness of strained Si/SiGe material

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1298-1306

  Olsen, S H ^a   O'Neill, A G ^a   Bull, S J ^a   Woods, N J ^b   Zhang, J ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AS-GROWN; DEVICE PERFORMANCE; DEVICE STRUCTURES; GATE OXIDATION; MATERIAL QUALITY; METAL OXIDE SEMICONDUCTOR; MICRO-ROUGHNESS; MORPHOLOGICAL CHANGES; OPTICAL PROFILOMETRY; SI/SIGE; STRAINED-SI/SIGE;

ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SURFACE ROUGHNESS;

MATERIALS;

EID: 0036679111     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489712     Document Type: Article

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