Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2165-2168

  Gotoh, M ^a   Sudoh, K ^a   Iwasaki, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044521613     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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