SCOPUS 정보 검색 플랫폼

Volumn 227-228, Issue , 2001, Pages 735-739

Modified GSMBE for higher growth rate and non-selective growth

(4) Woods, N J a Breton, G a Graoui, H b Zhang, J a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

A3. Chemical vapor deposition processes; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting silicon compounds; B3. Heterojunction semiconductor devices

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SELECTIVE EPITAXIAL GROWTH (SEG); ULTRA LOW PRESSURE CHEMICAL VAPOR DEPOSITION (ULPCVD);

SEMICONDUCTOR GROWTH;

EID: 0035399254 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00817-X Document Type: Conference Paper

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.