Observation of oxide-thickness-dependent interface roughness in Si MOS structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1440-1444

  Koga, Junji ^a   Takagi, Shin Ichi ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Channel mobility; Interface roughness; Recovery process; Si; SiO2; Thermal oxidation

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MOS DEVICES; NONDESTRUCTIVE EXAMINATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL MOBILITY; INTERFACE ROUGHNESS; INTERFACE STATE DENSITY; RECOVERY PROCESS;

SURFACE ROUGHNESS;

EID: 0030080486     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1440     Document Type: Article

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