Material requirements and design considerations for Si/SiGe heterojunction CMOS

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 363-368

  Badcock, S ^a   O'neill A ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DEGRADATION; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STRAIN;

MATERIAL DEGRADATION; STRAIN RELAXATION;

CMOS INTEGRATED CIRCUITS;

EID: 0034316393     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0935     Document Type: Article

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