The evolution of (001) Si/SiO2 interface roughness during thermal oxidation

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages 2886-2893

  Fang, S J ^a,b,c   Chen, W ^a,d   Yamanaka, T ^a,e   Helms, C R ^a  

^a Stanford University   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^e HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (OPTICAL); IMAGE ANALYSIS; MORPHOLOGY; SEMICONDUCTING SILICON; SILICA; SURFACE ROUGHNESS; THERMAL EFFECTS; THERMOOXIDATION;

POWER SPECTRAL DENSITY; ROOT MEAN SQUARE ROUGHNESS;

INTERFACES (MATERIALS);

EID: 0031212883     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837912     Document Type: Article

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