Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy

Journal of Physics D: Applied Physics

Volumn 32, Issue 4, 1999, Pages 359-368

  Kovats, Z ^a   Salditt, T ^a   Metzger, T H ^a   Peisl, J ^a   Stimpel, T ^a   Lorenz, H ^a   Chu, J O ^b   Ismail, K ^b  

^a UNIVERSITY OF MUNICH   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFRACTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; X RAY SCATTERING; APPROXIMATION THEORY; EPITAXIAL GROWTH; RELAXATION PROCESSES;

DIFFUSE X RAY SCATTERING; GRAZING INCIDENCE DIFFRACTION; BORN APPROXIMATION; GRAZING INCIDENCE DIFFRACTION (GID);

SEMICONDUCTOR SUPERLATTICES; MULTILAYERS;

EID: 0033068259     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/4/002     Document Type: Article

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