Kinetics of wet oxidation at 1000 °C of Si0.5Ge0.5 relaxed alloy

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 484-487

  Zhang, J P ^a   Hemment, P L F ^b   Parker, E H C ^c  

^a SHANDONG NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; THICK FILMS;

SILICON GERMANIUM ALLOYS; WET OXIDATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032649538     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/319     Document Type: Article

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