Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 101-104

  Shiely, J P ^a   Massoud, H Z ^a  

^a Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRON TUNNELING; OXIDES; SEMICONDUCTING FILMS; SUBSTRATES; ULTRATHIN FILMS;

CARRIER TUNNELING; ULTRATHIN OXIDES;

MOSFET DEVICES;

EID: 0033190173     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00347-0     Document Type: Article

References (5)

1. H. S. Momose, et al., "1.5 nm direct-tunneling gate oxide Si MOSFET's," IEEE Trans. Electron Devices, 36, 11 (1996).
2. J. P. Shiely and H. Z. Massoud, (to be published).
3. M. R. Pinto, C. S. Rafferty, and R. W. Dutton, "PISCES-II - Poisson and continuity equation solver," Stanford Electronics Laboratory Technical Report, Stanford University, Sept. 1984.
4. J. G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film," J. Appl. Phys., 34, 6 (1963).
5. B. K. Ip and J. R. Brews, "Quantum effects upon drain current in a biased MOSFET," IEEE Trans. Electron Devices, 45, 10 (1998).