Role of dopants and impurities on pinhole formation; Defects formed at InGaN/GaN and AlGaN/GaN quantum wells

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 375-380

  Liliental Weber, Z ^a   Ruvimov, S ^a   Swider, W ^a   Kim, Y ^a   Washburn, J ^a   Nakamura, S ^a   Kern, R S ^a   Chen, Y ^a   Yang, J W ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

OXYGEN OUTDIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031349114     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-375     Document Type: Conference Paper

References (7)