Dislocation reduction in AlN and GaN bulk crystals grown by HVPE

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 453-458

  Albrecht, M ^a   Nikitina, I P ^b   Nikolaev, A E ^b   Melnik, Yu V ^b,c   Dmitriev, V A ^b,c,d   Strunk, H P ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c TDI Inc   (United States)

^d Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HYDRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDES; BULK CRYSTALS; DISLOCATION DISTRIBUTIONS; GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

NITRIDES;

EID: 0033221677     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<453::AID-PSSA453>3.0.CO;2-M     Document Type: Article

References (17)

1. M. LESZYNSKI, T. SUSKI, H. TEISSYRE, P. PERLIN, I. GRZEGORY, J. JUN, S. POROWSKI, and T.D. MOUSTAKAS, J. Appl. Phys. 76, 4909 (1994).
2. Y. KATO, S. KITAMURA, K. HIRAMATSU, and N. SAWAKI, J. Cryst. Growth 144, 133 (1994).
3. O.H. NAM, B. BREMSER, B. WARD, R. NEMANICH, and R.F. DAVIS, Jpn. J. Appl. Phys. 36, L532 (1997).
4. T. DETCHPROM, K. HIRAMATSU, K. ITOH, and I. AKASAKI, Jpn. J. Appl. Phys. 31, L1454 (1992).
5. R.J. MOLNAR, W. GÖTZ, L.T. ROMANO, and N.M. JOHNSON, J. Cryst. Growth 178, 147 (1997).
6. YU.V. MELNIK, K. VASSILEVSKI, I.P. NIKITINA, A.I. BABANIN, V.YU. DAVIDOV, and VA. DMITRIEV, MRS Internet J. Nitride Semicond. Res. 2, art. No. 3 (1997).
7. N. ITOH, J.C. RHEE, T. KAWABATA, and S. KOIKE, J. Appl. Phys. 58, 1828 (1985).
8. T. KOZAWA, T. KACHI, H. KANO, H. NAGASE, N. KOIDE, and K. MANABE, J. Appl. Phys. 77, 4389 (1995).
9. I.P. NIKITINA, M.P. SHEGLOV, YU.V. MELNIK, K.G. IRVINE, and V.A. DMITRIEV, Diamond and Relat. Mater. 6, 1524 (1997).
10. L.T. ROMANO, B.S. KURSOR, and R.J. MOLNAR, Appl. Phys. Lett. 71, 2283 (1997).
11. A. SAKAI , H. SUNAKAWA, and A. USUI, Appl. Phys. Lett. 71, 2259 (1997).
12. V. FERREGOTTO, A. GEORGE, and J.-P. MICHEL, Mater. Sci. Engng. A 234/236, 625 (1997).
13. V.A. DMITRIEV, K. IRVINE, A. ZUBRILOV, D. TSVETKOV, V. NIKOLAEV, M. KAKOBSON, D. NELSON, and A. STINIKOVA, Mater. Res. Soc. Symp. Proc. 395, 295 (1996).
14. X.J. NING, F.R. CHIEN, P. PIROUZ, J.W. YANG, and M. ASIF KHAN, J. Mater. Res. 11, 580 (1996).
15. B. JAHNEN, M. ALBRECHT, W. DORSCH, S. CHRISTIANSEN, H.P. STRUNK, D. HANSER, and R.F. DAVIS, MRS Internet J. Nitride Semicond. Res. 3. Art.39 (1998).
16. A.E. ROMANOV, W. POMPE, S. MATHIS, G.E. BELTZ, and J.S. SPECK. J. Appl. Phys. 85, 182 (1999).
17. M. ALBRECHT, I.P. NIKITINA, A.E. NIKOLAEV, YU.V. MELNIK, V.A. DMITRIEV, and H.P. STRUNK, submitted to J. Appl. Phys.