Maskless pendeo-epitaxial growth of GaN films

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 421-428

  Roskowski, A M ^a   Preble, E A ^a   Einfeldt, S ^a,b   Miraglia, P M ^a   Davis, R F ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Atomic force microscopy (AFM); Gallium nitride (GAN); Metalorganic vapor phase epitaxy (MOVPE); Pendeo epitaxy (PE); Photoluminescence (PL); X ray diffraction (XRD)

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; TENSILE STRESS; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

MASKLESS PENDEO-EPITAXIAL GROWTH;

GALLIUM NITRIDE;

EID: 0036575148     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0095-6     Document Type: Article

References (45)