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Volumn 87, Issue 3, 2001, Pages 303-316

The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0)

Author keywords

Amorphous surface; Crystalline interfaces; Ion beam analysis; Ion channeling; Nuclear resonance; Silicon oxide; SiO2 Si (100)

Indexed keywords

CHEMICAL BONDS; CHEMICAL CLEANING; FILM GROWTH; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; STOICHIOMETRY; SUBSTRATES; THERMOOXIDATION; ULTRATHIN FILMS;

EID: 0035915287     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00729-2     Document Type: Article
Times cited : (27)

References (56)
  • 28
    • 85166373445 scopus 로고    scopus 로고
    • note
  • 30
    • 85166367877 scopus 로고    scopus 로고
    • Ph.D. Thesis, Arizona State University
    • (2000)
    • Hurst, Q.B.1
  • 34
    • 85166379887 scopus 로고    scopus 로고
    • M.Sc. Thesis, Arizona State University
    • (1998)
    • Banerjee, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.