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Volumn 7, Issue 1-2, 2000, Pages 7-14

Epitaxial growth of SiO2 on Mo(112)

Author keywords

[No Author keywords available]

Indexed keywords

MOLYBDENUM; SILICON DIOXIDE;

EID: 0033809240     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0218-625X(00)00003-8     Document Type: Article
Times cited : (141)

References (44)
  • 1
    • 0007921997 scopus 로고
    • The Physics of Silicon Dioxide and Its Interfaces (Pergamon)
    • (1978)
    • Pantelides, S.T.1
  • 2
    • 0007969811 scopus 로고
    • The Physics and Chemistry of Silicon Dioxide and the Silicon/Silicon Dioxide Interface (Plenum, New York)
    • (1988)
    • Helms, C.1    Deal, B.2
  • 3
    • 0007875169 scopus 로고
    • The Physics and Chemistry of Silicon Dioxide and the Silicon/Silicon Dioxide Interface (Plenum, New York)
    • (1993)
    • Helms, C.1    Deal, B.2
  • 16
    • 0007922609 scopus 로고
    • X-Ray Optics (Methuen, London) 2nd edition
    • (1962)
    • Wilson, A.1
  • 19
    • 0007875402 scopus 로고
    • The Structure and Chemistry of Solid Surfaces, ed. G. Somorjai (Wiley, New York)
    • (1969)
    • Tracy, J.1    Blakely, J.2
  • 27
    • 0007920245 scopus 로고
    • Crystal Growth for Beginners (World Scientific)
    • (1995)
    • Markov, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.