Growth of well-ordered silicon dioxide films on Mo(112)

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 841-844

  Schroeder, T ^a   Adelt, M ^a   Richter, B ^a   Naschitzki, M ^a   Baumer M ^a   Freund, H J ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); MOLYBDENUM; MOSFET DEVICES; OXIDATION; SILICA; SILICON; SINGLE CRYSTALS; THIN FILMS;

CRYSTALLINITY;

DIELECTRIC FILMS;

EID: 0033752210     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00323-6     Document Type: Article

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