Hydrogen passivation of Si(100) wafers as templates for low temperature (T < 600°C) epitaxy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 144-150

  Atluri, V ^a   Herbots, N ^a   Dagel, D ^a   Bhagvat, S ^a   Whaley, S ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL CLEANING; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; ETCHING; HYDROGEN; LOW TEMPERATURE OPERATIONS; PASSIVATION; SURFACE ROUGHNESS; SURFACE TREATMENT; TEMPERATURE PROGRAMMED DESORPTION;

HYDROGEN PASSIVATION; LOW TEMPERATURE EPITAXY; NUCLEAR REACTION ANALYSIS;

SILICON WAFERS;

EID: 0030565103     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01490-X     Document Type: Article

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