Atomic structure of point defects in compound semiconductor surfaces

Current Opinion in Solid State and Materials Science

Volumn 5, Issue 2-3, 2001, Pages 211-250

  Ebert, Ph ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR;

EID: 0034920973     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(00)00046-2     Document Type: Article

References (226)

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73. Anomalous scanning tunneling microscopy images of the GaAs(110) surface due to tip-induced band bending
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79. Surface morphology of GaAs(110) by scanning tunneling microscopy
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81. Tunneling microscopy of point defects on GaAs(110)
82. Geometry and electronic structure of the arsenic vacancy on GaAs(110)
83. A STM study of the InP (110) surface
84. Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces
85. Phosphorus vacancies and adatoms on GaP(110) surfaces studied by scanning tunneling microscopy
86. Characterization of the gallium vacancy on GaAs(110)
87. Electronic properties of the Ga vacancy in GaP(110)determined by scanning tunneling microscopy
88. Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy
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90. Structure of the As vacancies on GaAs(110) surfaces
91. Theoretical scanning tunneling microscopy images of the as vacancy on the GaAs(100) surface
92. Electronic and structural properties of vacancies on and below the GaP(110) surface
93. Formation of anion vacancies by Langmuir evaporation from InP and GaAs(110) surfaces
94. Symmetric versus non-symmetric structure of the phosphorus vacancy in InP(110)
95. Temperature dependent vacancy concentrations on InP(110) surfaces
96. A scanning tunneling microscopy study of clean and Cs-covered InSb(110)
97. Ga) in GaAs
98. Characterization of localized atomic surface defects by tunneling microscopy and spectroscopy
99. Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface
100. Oscillating contrast in room-temperature images of charged defects in compound semiconductor cleavage surfaces
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102. Step smoothing and surface vacancy reactions on InP(110) and GaP(110) observed by scanning tunneling microscopy
103. Changes of defect and active dopant concentrations induced by annealing of highly Si-doped GaAs
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113. Untersuchung von Defekten auf und nahe der (110)
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115. Theoretische Untersuchungen zu Leerstellen auf der (110)
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117. Temperature dependent compensation of Zn-dopant atoms by vacancies in III-V semiconductor surfaces
118. Direct determination of the interaction between vacancies on InP(110) surfaces
119. Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces
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126. Ab initio calculations of phonons at semiconductor surfaces
127. Self-consistent study of the electronic and structural properties of the clean Si(001) (2 × 1) surfaces
128. Surface phonons in InP(110)
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134. Time and temperature dependences of phosphorus evolution from InP
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136. Auger electron spectroscopy and electron loss spectroscopy comparative study of vacuum annealing effects on InP surface
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141. CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface
142. Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfaces
143. Interchain vacancy migration on GaAs(110)
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148. Erratum: Direct imaging of dopants in GaAs with cross-sectional scanning tunneling microscopy
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