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Volumn 409, Issue 3, 1998, Pages 435-444

Electronic and structural properties of the As vacancy on the (110) surface of GaAs

(2) Kim, Hanchul a Chelikowsky, James R a

a University of Minnesota (United States)

Author keywords

Computer simulations; Density functional calculations; Gallium arsenide; Low index single crystal surfaces; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; ENERGY GAP; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE; WAVEFORM ANALYSIS;

DENSITY FUNCTIONAL THEORY; LOW INDEX SINGLE CRYSTALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032115484 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00202-7 Document Type: Article

Times cited : (25)

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