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Applied Physics A: Materials Science and Processing

Volumn 64, Issue 5, 1997, Pages 457-466

Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation

(2) Krause Rehberg, K a Leipner, H S a

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONS; ESTIMATION; SCREENING; TEMPERATURE; THERMAL EFFECTS;

POSITRON; POSITRON ANNIHILATION; POSITRON TRAPPING; REFERENCE METHOD; VACANCY CONCENTRATION;

SEMICONDUCTOR MATERIALS;

EID: 0031143390 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (56)

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