SCOPUS 정보 검색 플랫폼

Surface Science Reports

Volumn 33, Issue 4, 1999, Pages 121-303

Nano-scale properties of defects in compound semiconductor surfaces

(1) Ebert, Ph a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRIC CHARGE; FERMI LEVEL; NANOSTRUCTURED MATERIALS; POINT DEFECTS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS;

CLEAVAGE SURFACES; LATTICE RELAXATION; NANOSCALE PROPERTIES;

SURFACE PROPERTIES;

EID: 0032626176 PISSN: 01675729 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-5729(98)00011-9 Document Type: Article

Times cited : (169)

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