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Volumn 53, Issue 11, 1996, Pages 6935-6938

Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: As vacancies on GaAs (110)

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Indexed keywords


EID: 0000404355     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.6935     Document Type: Article
Times cited : (53)

References (14)
  • 8
    • 77957056172 scopus 로고
    • J. A. Stroscio and R. M. Feenstra, in Scanning Tunneling Microscopy, edited by J. A. Stroscio and W. J. Kaiser, Methods of Experimental Physics Vol. 27 (Academic, New York, 1993), pp. 95-147.
    • (1993) Scanning Tunneling Microscopy , pp. 95-147
    • Stroscio, J.1    Feenstra, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.