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Volumn 77, Issue 1, 2000, Pages 61-63

Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces

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EID: 0001894015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126877     Document Type: Article
Times cited : (10)

References (17)
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    • 26144470793 scopus 로고
    • M. B. Johnson, O. Albrektsen, R. M. Feenstra, and H. W. M. Salemink, Appl. Phys. Lett. 63, 2923 (1993); 64, 1454 (1994).
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1454
  • 8
    • 0000404355 scopus 로고    scopus 로고
    • K.-J. Chao, A. R. Smith, and C. K. Shih. Phys. Rev. B 53, 6935 (1996); Ph. Ebert, X. Chen, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys. Rev. Lett. 76, 2089 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 6935
    • Chao, K.-J.1    Smith, A.R.2    Shih, C.K.3
  • 15
    • 85037516435 scopus 로고    scopus 로고
    • private communication
    • G. Schwarz (private communication).
    • Schwarz, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.