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Volumn 54, Issue 15, 1996, Pages 10288-10291

Microscopic identification of the compensation mechanisms in Si-doped GaAs

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EID: 0000847586     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.10288     Document Type: Article
Times cited : (121)

References (24)
  • 9
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    • G. Cox et. al Vacuum 41, 591 (1990).
    • (1990) Vacuum , vol.41 , pp. 591
    • Cox, G.1
  • 17
    • 0000782352 scopus 로고    scopus 로고
    • Ph. Ebert et. al Phys. Rev. B 53, 4580 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 4580
  • 18
    • 0000190096 scopus 로고
    • Ph. Ebert et. al Phys. Rev. B 51, 9696 (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 9696
  • 21
    • 0000141341 scopus 로고
    • The upper concentration limit of dopant atoms, which can be incorporated without Coulomb interactions, can be deduced from M. B. Johnson et. al Phys. Rev. Lett. 75, 1606 (1995).
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 1606
    • Johnson, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.