Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 230-238

  Vecchi, Maria Cristina ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Boltzmann Equation; Scattering mechanisms; Semiconductor device modeling; Spherical Harmonics Expansion

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; HARMONIC ANALYSIS; IONIZATION OF SOLIDS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS;

BOLTZMANN TRANSPORT EQUATION (BTE); SPHERICAL HARMONICS EXPANSION (SHE);

SEMICONDUCTING SILICON;

EID: 0031647347     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658836     Document Type: Article

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