-
1
-
-
0026140198
-
-
1991.
-
N. Goldsman, L. Henrickson, and J. Frey, "A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation," Solid-State Electron., vol. 34, no. 4, pp. 389-396, 1991.
-
L. Henrickson, and J. Frey, "A Physics-based Analytical/numerical Solution to the Boltzmann Transport Equation for Use in Device Simulation," Solid-State Electron., Vol. 34, No. 4, Pp. 389-396
-
-
Goldsman, N.1
-
2
-
-
0027576244
-
-
1993.
-
A. Gnudi, D. Ventura, G. Baccarani, and F. Odeh, "Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation," Solid-State Electron., vol. 36, no. 4, pp. 575-581, 1993.
-
D. Ventura, G. Baccarani, and F. Odeh, "Two-dimensional MOSFET Simulation by Means of A Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation," Solid-State Electron., Vol. 36, No. 4, Pp. 575-581
-
-
Gnudi, A.1
-
3
-
-
0029359452
-
-
1995.
-
K. A. Hennacy, Y. J. Wu, N. Goldsman, and I. D. Meiergoyz, "Deterministic MOSFET simulation using a generalized spherical harmonic expansion of the Boltzmann equation," Solid-State Electron., vol. 38, no. 8, pp. 1485-1495, 1995.
-
Y. J. Wu, N. Goldsman, and I. D. Meiergoyz, "Deterministic MOSFET Simulation Using A Generalized Spherical Harmonic Expansion of the Boltzmann Equation," Solid-State Electron., Vol. 38, No. 8, Pp. 1485-1495
-
-
Hennacy, K.A.1
-
4
-
-
33747763922
-
-
pp. 416-119.
-
M. C. Vecchi and M. Rudan, "Modeling impact-ionization in the framework of the spherical-harmonics expansion of the Boltzmann transport equation with full-band structure effects," in Proc. 6th SISDEP Conf., Erlangen, The Netherlands, 1995, vol. 6, pp. 416-119.
-
And M. Rudan, "Modeling Impact-ionization in the Framework of the Spherical-harmonics Expansion of the Boltzmann Transport Equation with Full-band Structure Effects," in Proc. 6th SISDEP Conf., Erlangen, the Netherlands, 1995, Vol. 6
-
-
Vecchi, M.C.1
-
5
-
-
0001961963
-
-
1992.
-
D. Ventura, A. Gnudi, and G. Baccarani, "Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors," Appl. Math. Lett., vol. 5, no. 3, pp. 85-90, 1992.
-
A. Gnudi, and G. Baccarani, "Multidimensional Spherical Harmonics Expansion of Boltzmann Equation for Transport in Semiconductors," Appl. Math. Lett., Vol. 5, No. 3, Pp. 85-90
-
-
Ventura, D.1
-
6
-
-
0023965768
-
-
Feb. 1988.
-
A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, "A new discretization strategy of the semiconductor equations comprising momentum and energy balance," IEEE Trans. Computer-Aided Design, vol. 7, pp. 231-242, Feb. 1988.
-
R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, "A New Discretization Strategy of the Semiconductor Equations Comprising Momentum and Energy Balance," IEEE Trans. Computer-Aided Design, Vol. 7, Pp. 231-242
-
-
Forghieri, A.1
-
7
-
-
0004946146
-
-
1995.
-
D. Ventura, A. Gnudi, and G. Baccarani, "Short-range electron-electron scattering in silicon with a nonparabolic band structure," Numer. Functional Anal. Optimiz., vol. 16, nos. 3/4, pp. 565-581, 1995.
-
A. Gnudi, and G. Baccarani, "Short-range Electron-electron Scattering in Silicon with A Nonparabolic Band Structure," Numer. Functional Anal. Optimiz., Vol. 16, Nos. 3/4, Pp. 565-581
-
-
Ventura, D.1
-
8
-
-
33747755004
-
-
1992.
-
"An efficient method for evaluating the energy distribution of electrons in semiconductors based on the spherical harmonics expansion," IEICE Trans. Electron., vol. 75-C, no. 2, pp. 194-199, 1992.
-
Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on the Spherical Harmonics Expansion," IEICE Trans. Electron., Vol. 75-C, No. 2, Pp. 194-199
-
-
Efficient, A.1
-
9
-
-
84983227767
-
-
pp. 55-58.
-
M. C. Vecchi, D. Ventura, A. Gnudi, and G. Baccarani, "Incorporating full band-structure effects in the spherical-harmonics expansion of the Boltzmann transport equation," in Proc. NUPAD V Conf., Honolulu, HI, 1994, pp. 55-58.
-
D. Ventura, A. Gnudi, and G. Baccarani, "Incorporating Full Band-structure Effects in the Spherical-harmonics Expansion of the Boltzmann Transport Equation," in Proc. NUPAD v Conf., Honolulu, HI, 1994
-
-
Vecchi, M.C.1
-
10
-
-
35949009958
-
-
1988.
-
M. V. Fischetti and S. E. Laux, "Monte-Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Phys. Rev. B, vol. 38, p. 9721, 1988.
-
And S. E. Laux, "Monte-Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-structure and Space-charge Effects," Phys. Rev. B, Vol. 38, P. 9721
-
-
Fischetti, M.V.1
-
11
-
-
0018702521
-
-
pp. 31-64.
-
P. E. Cottrell and E. M. Buturla, "Two-dimensional static and transient simulation of mobile carrier transport in a semiconductor," in Proc. NASECODE I Conf., Dublin, Ireland, 1979, pp. 31-64.
-
And E. M. Buturla, "Two-dimensional Static and Transient Simulation of Mobile Carrier Transport in A Semiconductor," in Proc. NASECODE i Conf., Dublin, Ireland, 1979
-
-
Cottrell, P.E.1
-
12
-
-
0022776857
-
-
1986.
-
M. Rudan and F. Odeh, "Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices," COMPEL, vol. 5, no. 3, pp. 149-183, 1986.
-
And F. Odeh, "Multi-dimensional Discretization Scheme for the Hydrodynamic Model of Semiconductor Devices," COMPEL, Vol. 5, No. 3, Pp. 149-183
-
-
Rudan, M.1
-
14
-
-
85176522878
-
-
1986.
-
W. Hänsch and M. Miura-Mattausch, "The hot-electron problem in small semiconductor devices," J. Appl. Phys., vol. 60, p. 650, 1986.
-
̈Nsch and M. Miura-Mattausch, "The Hot-electron Problem in Small Semiconductor Devices," J. Appl. Phys., Vol. 60, P. 650
-
-
Ha, W.1
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