Investigation on electron and hole transport properties using the full-band spherical-harmonics expansion method

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 2010-2017

  Reggiani, Susanna ^a   Vecchi, Maria Cristina ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; IMPACT IONIZATION; IMPURITIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BOLTZMANN TRANSPORT EQUATION; CARRIER PHONON SCATTERING; FULL BAND SPHERICAL HARMONIC EXPANSION METHOD; HOLE TRANSPORT PROPERTIES;

SEMICONDUCTOR DEVICE MODELS;

EID: 0032167185     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711368     Document Type: Article

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