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Volumn 13, Issue 8 SUPPL. A, 1998, Pages

Cellular automata simulation of nanometre-scale MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2142641902 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/13/8A/050 Document Type: Article

Times cited : (4)

References (9)

1
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- New York: Springer
- Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Equations (New York: Springer)
- (1989) The Monte Carlo Method for Semiconductor Device Equations
- Jacoboni, C.¹ Lugli, P.²

2
- 0000703422
- Lattice-gas cellular-automaton method for semiclassical transport in semiconductors
- Kometer K, Zandler G and Vogl P 1992 Lattice-gas cellular-automaton method for semiclassical transport in semiconductors Phys. Rev. B 46 (3) 1382-94
- (1992) Phys. Rev. B , vol.46 , Issue.3 , pp. 1382-1394
- Kometer, K.¹ Zandler, G.² Vogl, P.³

3
- 22244478879
- PhD Thesis Technische Universität München, Walter Schottky Institut
- Kometer K 1992 Lösung der Boltzmann-Gleichung mit der Methode zellulärer Automaten PhD Thesis Technische Universität München, Walter Schottky Institut
- (1992) Lösung der Boltzmann-Gleichung mit der Methode Zellulärer Automaten
- Kometer, K.¹

4
- 22244439767
- PhD Thesis Technische Universität München, Walter Schottky Institut
- Rein A 1995 Zelluläre Automaten in der Transporttheorie: Konzepte und Anwendungen PhD Thesis Technische Universität München, Walter Schottky Institut
- (1995) Zelluläre Automaten in der Transporttheorie: Konzepte und Anwendungen
- Rein, A.¹

5
- 11544300658
- CVD-EPI MOS transistor with a 65 nm vertical channel
- Hofmann F, Krautschneider W H, Risch L and Schaefer H 1995 CVD-EPI MOS transistor with a 65 nm vertical channel Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (Osaka) pp 46-8
- (1995) Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (Osaka) , pp. 46-48
- Hofmann, F.¹ Krautschneider, W.H.² Risch, L.³ Schaefer, H.⁴

6
- 0030242730
- Vertical MOS transistors with 70 nm channel length
- Risch L, Krautschneider W H, Hofmann F, Schäfer H, Aeugle T and Rösner W 1996 Vertical MOS transistors with 70 nm channel length IEEE Trans. Electron Devices 43 (9) 1495-8
- (1996) IEEE Trans. Electron Devices , vol.43 , Issue.9 , pp. 1495-1498
- Risch, L.¹ Krautschneider, W.H.² Hofmann, F.³ Schäfer, H.⁴ Aeugle, T.⁵ Rösner, W.⁶

7
- 35949009958
- Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
- Fischetti M V and Laux S E 1988 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys. Rev. B 38 (14) 9721-45
- (1988) Phys. Rev. B , vol.38 , Issue.14 , pp. 9721-9745
- Fischetti, M.V.¹ Laux, S.E.²

8
- 36449002522
- A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model
- Kunikiyo T, Takenaka M, Kamakura Y, Yamaji M, Mizuno H, Morifuji M, Taniguchi K and Hamaguchi C 1994 A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model J. Appl. Phys. 75 (1) 297-312
- (1994) J. Appl. Phys. , vol.75 , Issue.1 , pp. 297-312
- Kunikiyo, T.¹ Takenaka, M.² Kamakura, Y.³ Yamaji, M.⁴ Mizuno, H.⁵ Morifuji, M.⁶ Taniguchi, K.⁷ Hamaguchi, C.⁸

9
- 0031079417
- Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
- Auth C P and Plummer J D 1997 Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's IEEE Electron Device Letters 18 (2) 74-6
- (1997) IEEE Electron Device Letters , vol.18 , Issue.2 , pp. 74-76
- Auth, C.P.¹ Plummer, J.D.²

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