Optimized terminal current calculation for monte carlo device simulation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 16, Issue 10, 1997, Pages 1082-1087

  Yoder, P D ^a   Gartner K ^a   Krumbein, Ulrich ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000076564     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.662672     Document Type: Article

References (12)

1. [1B. S. Polsky and J. S. Rimshans, Numerical simulation of transient processes in 2-D bipolar transistor Solid State Electron.,24, pp. 1081-1085, 1981.
2. [2E. Palm and F. Van de Wiele, Current lines and accurate contact current evaluation in 2-D numerical simulation of semiconductor devices IEEE Trans. Electron Devices,ED-32, pp. 2052-2059, 1985.
3. [3DESSIS_isE Manual, ISE Integrated Systems Engineering AG, Zürich, Switzerland, 1994.
4. [4W. Shockley, Currents to conductors induced by a moving point charge J. Appl. Phys.,9, pp. 635-636, 1938.
5. [5S. Ramo, Currents induced by electron motion Proc. IRE,27, pp. 584-585, 1939.
6. [6P. De Visschere, The validity of Ramo's theorem Solid State Electron.,33, pp. 455-59, 1990.
7. [7H. Kim, H. S. Min, T. W. Tang, and Y. J. Park, An extended proof of the Ramo-Shockley theorem Solid State Electron.,34, pp. 1251-1253, 1991.
8. [8M. S. Mock, Analysis of Mathematical Models of Semiconductor Devices. Dublin, Ireland: Boole, 1983.
9. [9A. Gajewski, private communications; see also TOSCA Users Manual, Karl Weierstrass Institute, Berlin, Germany.
10. [10W. E. Matzke, K. Gärtner, and B. Heinemann, 2-D and 3-D capacitance calculations for VLSI structures using the energy method in Simulation of Semiconductor Devices and Processes,3, G. Baccarani and M. Rudan, Eds., 1988, pp. 613-624.
11. [11DEGAS_isE Reference Manual, ISE Integrated Systems Engineering AG, Zürich, Switzerland, 1994.
12. J. Gyoyoung, E. C. Kan, and R. W. Dutton, A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation in Proc. 1996 Int. Conf. Simulation of Semiconductor Processes and Devices