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Volumn 14, Issue 2, 1993, Pages 77-79

A Comparison of Monte Carlo and Cellular Automata Approaches for Semiconductor Device Simulation

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EID: 2142768409     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215114     Document Type: Article
Times cited : (20)

References (14)
  • 4
    • 35949009958 scopus 로고
    • Monte Carlo analysis of electron transport in small semiconductor devices including band structure and space charge effects
    • M. Fischetti and S. E. Laux, “Monte Carlo analysis of electron transport in small semiconductor devices including band structure and space charge effects,” Phys. Rev., vol. B 38, p. 9721, 1988.
    • (1988) Phys. Rev. , vol.B 38 , pp. 9721
    • Fischetti, M.1    Laux, S.E.2
  • 6
    • 0023591102 scopus 로고
    • Recent applications of Monte Carlo methods for semiconductor microdevice simulation
    • B. Shapo, C. Ball, I. Kizilyalli, and U. Ravaioli, “Recent applications of Monte Carlo methods for semiconductor microdevice simulation,” Superlattices and Microstructures, vol. 4, p. 39, 1988.
    • (1988) Superlattices and Microstructures , vol.4 , pp. 39
    • Shapo, B.1    Ball, C.2    Kizilyalli, I.3    Ravaioli, U.4
  • 7
    • 0000703422 scopus 로고
    • Lattice-gas cellular-automaton method for semiclassical transport in semiconductors
    • K. Kometer, G. Zandler, and P. Vogl, “Lattice-gas cellular-automaton method for semiclassical transport in semiconductors,” Phys. Rev., vol. B 46, p. 1382, 1992.
    • (1992) Phys. Rev. , vol.B 46 , pp. 1382
    • Kometer, K.1    Zandler, G.2    Vogl, P.3
  • 8
    • 0014846935 scopus 로고
    • Monte Carlo determination of electron transport properties in GaAs
    • W. Fawcett, A. D. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in GaAs,” J. Phys. Chem. Solids, vol. 31, p. 1963, 1970.
    • (1970) J. Phys. Chem. Solids , vol.31 , pp. 1963
    • Fawcett, W.1    Boardman, A.D.2    Swain, S.3
  • 9
    • 35949016104 scopus 로고
    • Lattice-gas automata for the Navier-Stokes equation
    • U. Frisch, B. Hasslacher, and Y. Pomeau, “Lattice-gas automata for the Navier-Stokes equation,” Phys. Rev. Lett., vol. 56, p. 1505, 1986.
    • (1986) Phys. Rev. Lett. , vol.56 , pp. 1505
    • Frisch, U.1    Hasslacher, B.2    Pomeau, Y.3
  • 10
    • 0000139141 scopus 로고
    • Lattice gas hydrodynamics in two and three dimensions
    • U. Frisch et al., “Lattice gas hydrodynamics in two and three dimensions,” Complex Syst., vol. 1, p. 649, 1987.
    • (1987) Complex Syst. , vol.1 , pp. 649
    • Frisch, U.1
  • 11
    • 0041599417 scopus 로고
    • Lattice gas methods for PDE's: Theory, application, and hardware
    • G. D. Doolen, Ed., “Lattice gas methods for PDE’s: Theory, application, and hardware,” Physica, vol. D 45, 1990.
    • (1990) Physica , vol.D 45
    • Doolen, G.D.1
  • 12
    • 0025593958 scopus 로고
    • Lattice-gas approach to semiconductor device simulation
    • M. G. Ancona, “Lattice-gas approach to semiconductor device simulation,” Solid State Electron., vol. 33, p. 1633, 1990.
    • (1990) Solid State Electron. , vol.33 , pp. 1633
    • Ancona, M.G.1
  • 13
    • 0017553475 scopus 로고
    • Velocity-field of GaAs with Γc/6-Lc/6-Xc/6
    • M. A. Littlejohn, J. Hauser, and T. H. Glisson, “Velocity-field of GaAs with Γc/6-Lc/6-Xc/6,” J. Appl. Phys., vol. 48, p. 4587, 1977.
    • (1977) J. Appl. Phys. , vol.48 , pp. 4587
    • Littlejohn, M.A.1    Hauser, J.2    Glisson, T.H.3
  • 14
    • 0026838603 scopus 로고
    • Cellular automata simulation of stationary and transient high-field transport in submicron Si and GaAs devices
    • K. Kometer, G. Zandler, and P. Vogl, “Cellular automata simulation of stationary and transient high-field transport in submicron Si and GaAs devices,” Semicond. Sci. Technol., vol. 7, p. B559, 1992.
    • (1992) Semicond. Sci. Technol. , vol.7 , pp. B559
    • Kometer, K.1    Zandler, G.2    Vogl, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.