Influence of crystalline defects on transport properties of GaN grown by ammonia-molecular beam epitaxy and magnetron sputter epitaxy

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 268-273

  Tang, H ^a   Webb, J ^a   Bardwell, J ^a   Leathem, B ^a   Charbonneau, S ^a   Raymond, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); FILM GROWTH; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; OPTICAL CORRELATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSPORT PROPERTIES; X RAY CRYSTALLOGRAPHY;

MAGNETRON SPUTTER EPITAXY; THREADING DISLOCATIONS; YELLOW LUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0033884913     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0061-0     Document Type: Article

References (30)

1. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Speck, Appl. Phys. Lett. 68, 643 (1996).
2. F.A. Ponce, D. Cherns, W.T. Young, and J.W. Steeds, Appl. Phys. Lett. 69, 770 (1996).
3. S. Nakamura, T. Mukai, and M. Senoh, J. Appl. Phys. 76, 8189 (1994).
4. S.D. Lester, F.A. Ponce, M.G. Cranford, and D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1996).
5. J. Elsner, R. Jones, P.K. Sitch, V.D. Porezag, M. Elstner, Th. Frauenheim, M.I. Heggie, S. Oberg, and P.R. Briddon, Phys. Rev. Lett. 79, 3672 (1997).
6. A.F. Wright and J. Furthmuller, Appl. Phys. Lett. 72, 3467 (1998).
7. A.F. Wright and U. Grossner, Appl. Phys. Lett. 73, 2751 (1998).
8. J. Elsner, R. Jones, M.I. Heggie, P.K. Stich, M. Haugk, Th. Frauenheim, S. Oberg, and P.R. Bridden, Phys. Rev. B 58, 12571 (1998).
9. S. Nakamura et al., Appl. Phys. Lett. 72, 211 (1998).
10. N.G. Weimann, L.F. Eastman, D. Doppalapudi, H.M. Ng, and T.D. Moustakas, J. Appl. Phys. 83, 3656 (1998).
11. H.M. Ng, D. Doppalapudi, T.D. Moustakas, N.G. Weimann, and L.F. Eastman, Appl. Phys. Lett. 73, 821 (1998).
12. D.C. Look and J.R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999).
13. J.B. Webb, D. Northcott, S. Charbonneau, F. Yang, D.J. Lockwood, O. Malvezin, P. Singh, and J. Corbett, Mater. Sci. Forum 264, 1229 (1998).
14. H. Tang and J.B. Webb, Appl. Phys. Lett. 74, 2373 (1999).
15. J.B. Webb, D.J. Lockwood, and D. Northcott, Appl. Surf. Sci. 70/71, 526 (1993).
16. J.E. Ayers, J. Cryst. Growth 135, 71 (1994).
17. K. Leung, A.F. Wright, and E.B. Stechel, Appl. Phys. Lett. 74, 2495 (1999).
18. A. Pelzmann et al., MRS Internet J. Nitride Semicond. Res. Vol. 1, Article 40.
19. E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, and J.S. Speck, J. Appl. Phys. 82, 5472 (1997).
20. X. Shen, S. Tanaka, S. Iwai, and Y. Aoyagi, Jpn. J. Appl. Phys. 37, L637 (1998).
21. W. Kim, A.E. Botchkarev, H. Morkoc, Z. Fang, D.C. Look, and D.J. Smith, J. Appl. Phys. 84, 6680 (1998).
22. D.C. Look, J.R. Sizelove, S. Keller, Y.F. Wu, U.K. Mishra, and S.P. DenBaars, Solid State Commun. 102, 297 (1997).
23. H. Tang, W. Kim, A. Botchkarev, G. Popovici, F. Hamdani, and H. Morkoc, Solid State Electron. 42, 839 (1998).
24. V.W.L. Chin, T.L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
25. J. Neugebauer and C.G. Van der Walle, Appl. Phys. Lett. 69, 503 (1996).
26. E. Calleja et al., Phys. Rev. B 55, 4689 (1997).
27. F.A. Ponce, D.P. Bour, W. Gotz, and P.J. Wright, Appl. Phys. Lett. 68, 57 (1996).
28. S.J. Rosner, E.C. Carr, M.J. Ludowise, G. Girolami, and H.I. Eriksen, Appl. Phys. Lett. 70, 420 (1997).
29. Z.Z. Bandic, P.M. Bridger, E.C. Piquette, and T.C. McGill, Appl. Phys. Lett. 72, 3166 (1998).
30. L. Chernyak, A. Osinsky, H. Temkin, J.W. Yang, Q. Chen, and M.A. Khan, Appl. Phys. Lett. 69, 2531 (1996).