Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 6 A, 1998, Pages

  Shen, Xu Qiang ^a   Tanaka, Satoru ^a   Iwai, Sohachi ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL VARIABLES MEASUREMENT; PHASE DIAGRAMS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION;

GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY;

FILM GROWTH;

EID: 0032089514     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l637     Document Type: Article

References (14)